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1 Ergebnisse
1
Ongoing Evolution of DRAM Scaling via Third Dimension -Vert..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Han, J.W.
;
Park, S.H.
;
Jeong, M.Y.
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185290&Exemplar=1&LAN=DE A1 Han, J.W. A1 Park, S.H. A1 Jeong, M.Y. A1 Lee, K.S. A1 Kim, K.N. A1 Kim, H.J. A1 Shin, J.C. A1 Park, S.M. A1 Shin, S.H. A1 Park, S.W. A1 Lee, K.S. A1 Lee, J.H. A1 Kim, S.H. A1 Kim, B.C A1 Jung, M.H. A1 Yoon, I.Y. A1 Kim, H. A1 Jang, S.U. A1 Park, K.J. A1 Kim, Y.K. A1 Kim, I.G. A1 Oh, J.H A1 Han, S.Y. A1 Kim, B.S. A1 Kuh, B.J. A1 Park, J.M. YR 2023 SN 2158-9682 K1 Technological innovation K1 Three-dimensional displays K1 Stacking K1 Capacitors K1 Random access memory K1 Very large scale integration K1 Transistors SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185290 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185290 SF ELIB - SuUB Bremen
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