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1 Ergebnisse
1
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High ..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Zhang, Zhuocheng
;
Lin, Zehao
;
Niu, Chang
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185292&Exemplar=1&LAN=DE A1 Zhang, Zhuocheng A1 Lin, Zehao A1 Niu, Chang A1 Si, Mengwei A1 Alam, Muhammad A. A1 Ye, Peide D. YR 2023 SN 2158-9682 K1 Temperature dependence K1 Temperature K1 Annealing K1 Field effect transistors K1 Channel estimation K1 NIST K1 Very large scale integration SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185292 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185292 SF ELIB - SuUB Bremen
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