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1 Ergebnisse
1
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memo..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Yoon, Sunghyun
;
Hong, Sung-In
;
Kim, Daehyun
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185294&Exemplar=1&LAN=DE A1 Yoon, Sunghyun A1 Hong, Sung-In A1 Kim, Daehyun A1 Choi, Garam A1 Kim, Young Mo A1 Min, Kyunghoon A1 Kim, Seiyon A1 Na, Myung-Hee A1 Cha, Seonyong YR 2023 SN 2158-9682 K1 Performance evaluation K1 Mass production K1 Three-dimensional displays K1 Diffraction K1 Very large scale integration K1 Hafnium compounds K1 Flash memories K1 3D NAND K1 ferroelectric K1 flash K1 QLC SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185294 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185294 SF ELIB - SuUB Bremen
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