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U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Wu, Ming-Hung ; Hong, Ming-Chun ; Shih, Ching... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185336&Exemplar=1&LAN=DE
				
A1 Wu, Ming-Hung
A1 Hong, Ming-Chun
A1 Shih, Ching
A1 Chang, Yao-Jen
A1 Hsin, Yu-Chen
A1 Chiu, Shih-Ching
A1 Chen, Kuan-Ming
A1 Su, Yi-Hui
A1 Wang, Chih-Yao
A1 Yang, Shan-Yi
A1 Chen, Guan-Long
A1 Lee, Hsin-Han
A1 Rahaman, Sk Ziaur
A1 Wang, I-Jung
A1 Shih, Chen-Yi
A1 Chang, Tsun-Chun
A1 Wei, Jeng-Hua
A1 Sheu, Shyh-Shyuan
A1 Lo, Wei-Chung
A1 Chang, Shih-Chieh
A1 Hou, Tuo-Hung
YR 2023
SN 2158-9682
K1 Low voltage
K1 Magnetic field measurement
K1 Switches
K1 Very large scale integration
K1 Probabilistic logic
K1 Time measurement
K1 Magnetic fields
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336
SF ELIB - SuUB Bremen

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