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Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Liang, Yan-Kui ; Zheng, June-Yang ; Lin, Yu-Lon... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185343&Exemplar=1&LAN=DE
				
A1 Liang, Yan-Kui
A1 Zheng, June-Yang
A1 Lin, Yu-Lon
A1 Li, Wei-Li
A1 Lu, Yu-Cheng
A1 Hsieh, Dong-Ru
A1 Peng, Li-Chi
A1 Chou, Tsung-Te
A1 Kei, Chi-Chung
A1 Lu, Chun-Chieh
A1 Huang, Huai-Ying
A1 Tseng, Yuan-Chieh
A1 Chao, Tien-Sheng
A1 Chang, Edward Yi
A1 Lin, Chun-Hsiung
YR 2023
SN 2158-9682
K1 Performance evaluation
K1 Films
K1 Logic gates
K1 Benchmark testing
K1 Very large scale integration
K1 Ions
K1 Threshold voltage
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185343
SF ELIB - SuUB Bremen

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