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1 Ergebnisse
1
Towards DTCO in High Temperature GaN-on-Si Technology: Arit..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Xie, Qingyun
;
Yuan, Mengyang
;
Niroula, John
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185364&Exemplar=1&LAN=DE A1 Xie, Qingyun A1 Yuan, Mengyang A1 Niroula, John A1 Sikder, Bejoy A1 Luo, Shisong A1 Fu, Kai A1 Rajput, Nitul S. A1 Pranta, Ayan Biswas A1 Yadav, Pradyot A1 Zhao, Yuji A1 Chowdhury, Nadim A1 Palacios, Tomas YR 2023 SN 2158-9682 K1 Solid modeling K1 Temperature K1 Design automation K1 Voltage K1 Very large scale integration K1 Market research K1 Timing K1 GaN K1 arithmetic logic unit K1 VLSI K1 high temperature K1 compact modeling K1 MVSG K1 computer-aided design (CAD) SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185364 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185364 SF ELIB - SuUB Bremen
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