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Highly Reliable/Manufacturable 4nm FinFET Platform Technolo..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Son, Kihwang ; Park, Seulki ; Jung, Kyunghoon... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185365&Exemplar=1&LAN=DE
				
A1 Son, Kihwang
A1 Park, Seulki
A1 Jung, Kyunghoon
A1 Kim, Jun-Gyu
A1 Ko, Younggun
A1 Cheon, Keonyong
A1 Yoon, Changkeun
A1 Kim, Jiho
A1 Jeong, Jaehun
A1 Myung, Taehun
A1 Hong, Changmin
A1 Jang, Weonwi
A1 Sun, Min-Chul
A1 Jo, Sungil
A1 Kim, Ju-Youn
A1 Song, Byungmoo
A1 Yasuda-Masuoka, Yuri
A1 Ku, Ja-Hum
A1 Jeong, Gitae
YR 2023
SN 2158-9682
K1 Performance evaluation
K1 Random access memory
K1 Very large scale integration
K1 Inverters
K1 Yield estimation
K1 Transistors
K1 Reliability
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185365
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185365
SF ELIB - SuUB Bremen

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