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1 Ergebnisse
1
Contact Cavity Shaping and Selective SiGe:B Low-Temperature..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Breil, N.
;
Lee, B-C.
;
Avendano, J. Avila
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185379&Exemplar=1&LAN=DE A1 Breil, N. A1 Lee, B-C. A1 Avendano, J. Avila A1 Jewell, J. A1 Vellaikal, M. A1 Newman, E. A1 Bazizi, E. M. A1 Pal, A. A1 Liu, L. A1 Gluschenkov, O. A1 Greene, A. A1 Mochizuki, S. A1 Loubet, N. A1 Colombeau, B. A1 Haran, B. YR 2023 SN 2158-9682 K1 Boron K1 Annealing K1 Voltage measurement K1 Implants K1 Very large scale integration K1 FinFETs K1 Contact resistance SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185379 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185379 SF ELIB - SuUB Bremen
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