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1 Ergebnisse
1
Lowest IOFF −21 A/μm in capacitorless DRAM achieved by Reac..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Belmonte, A.
;
Kundu, S.
;
Subhechha, S.
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Lowest IOFF −21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185398&Exemplar=1&LAN=DE A1 Belmonte, A. A1 Kundu, S. A1 Subhechha, S. A1 Chasin, A. A1 Rassoul, N. A1 Dekkers, H. A1 Puliyalil, H. A1 Seidel, F. A1 Carolan, P. A1 Delhougne, R. A1 Kar, G. S. YR 2023 SN 2158-9682 K1 Performance evaluation K1 Random access memory K1 Metals K1 Machine learning K1 Very large scale integration K1 Ions K1 DRAM K1 IGZO K1 RIE K1 2T0C K1 Capacitorless SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185398 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185398 SF ELIB - SuUB Bremen
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