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1 Ergebnisse
1
Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO See..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Kim, Seongho
;
Park, Young Keun
;
Lee, Gyu Soup
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185400&Exemplar=1&LAN=DE A1 Kim, Seongho A1 Park, Young Keun A1 Lee, Gyu Soup A1 Shin, Eui Joong A1 Ko, Woon San A1 Lee, Hi Deok A1 Lee, Ga Won A1 Cho, Byung Jin YR 2023 SN 2158-9682 K1 Capacitors K1 Random access memory K1 Crystallization K1 Very large scale integration K1 Epitaxial growth K1 Dielectrics K1 High-k dielectric materials SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185400 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185400 SF ELIB - SuUB Bremen
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