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Highly Scalable Metal Induced Lateral Crystallization (MILC..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Ishihara, N. ; Shimada, Y. ; Ochi, T.... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185401&Exemplar=1&LAN=DE
				
A1 Ishihara, N.
A1 Shimada, Y.
A1 Ochi, T.
A1 Seto, S.
A1 Matsuo, H.
A1 Yamashita, H.
A1 Morita, S.
A1 Ukishima, M.
A1 Uejima, K.
A1 Arayashiki, Y.
A1 Kajiwara, S.
A1 Murayama, A.
A1 Nishiyama, K.
A1 Sugimae, K.
A1 Mori, S.
A1 Saito, Y.
A1 Shundo, T.
A1 Maeda, A.
A1 Kamiya, H.
A1 Uchiyama, Y.
A1 Fujiwara, M.
A1 Aiso, F.
A1 Sekine, K.
A1 Ohtani, N.
YR 2023
SN 2158-9682
K1 Degradation
K1 Three-dimensional displays
K1 Noise reduction
K1 Crystallization
K1 Very large scale integration
K1 Silicon
K1 Nickel
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185401
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185401
SF ELIB - SuUB Bremen

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