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Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Wu, Wen-Chia ; Hung, Terry Y.T. ; Sathaiya, D. Mahaveer... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Scaled contact length with low contact resistance in monolayer 2D channel transistors</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185408&Exemplar=1&LAN=DE
				
A1 Wu, Wen-Chia
A1 Hung, Terry Y.T.
A1 Sathaiya, D. Mahaveer
A1 Fan, Dongxu
A1 Arutchelvan, Goutham
A1 Hsu, Chen-Feng
A1 Su, Sheng-Kai
A1 Chou, Ang Sheng
A1 Chen, Edward
A1 Li, Weisheng
A1 Yu, Zhihao
A1 Qiu, Hao
A1 Yang, Ying-Mei
A1 Lin, Kuang-I
A1 Shen, Yun-Yang
A1 Chang, Wen-Hao
A1 Liew, San Lin
A1 Hou, Vincent
A1 Cai, Jin
A1 Wu, Chung-Cheng
A1 Wu, Jeff
A1 Philip Wong, H.-S.
A1 Wang, Xinran
A1 Chien, Chao-Hsin
A1 Cheng, Chao-Ching
A1 Radu, Iuliana P.
YR 2023
SN 2158-9682
K1 Surface resistance
K1 Two dimensional displays
K1 Very large scale integration
K1 Logic gates
K1 Contact resistance
K1 Nanoscale devices
K1 Transistors
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185408
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185408
SF ELIB - SuUB Bremen

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