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Towards low damage and fab-compatible top-contacts in MX2 t..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Kundu, S. ; van Dorp, D. H. ; Schram, T.... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185413&Exemplar=1&LAN=DE
				
A1 Kundu, S.
A1 van Dorp, D. H.
A1 Schram, T.
A1 Smets, Q.
A1 Banerjee, S.
A1 Groven, B.
A1 Cott, D.
A1 Decoster, S.
A1 Bezard, P.
A1 Lazzarino, F.
A1 Banerjee, K.
A1 Ghosh, S.
A1 de Marneffe, J. F.
A1 Morin, P.
A1 de La Rosa, C. J. L.
A1 Asselberghs, I.
A1 Kar, G. S.
YR 2023
SN 2158-9682
K1 Atomic layer deposition
K1 Adsorption
K1 Metals
K1 Very large scale integration
K1 Logic gates
K1 Etching
K1 Hafnium compounds
K1 damascene contact
K1 top contacts
K1 WS2 FET
K1 atomic layer etching
K1 wet-chemical etching
K1 selectivity
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185413
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185413
SF ELIB - SuUB Bremen

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