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1 Ergebnisse
1
A 40 nm 2 kb MTJ-Based Non-Volatile SRAM Macro with Novel D..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Suzuki, Kenta
;
Hiraga, Keizo
;
Bessho, Kazuhiro
.. - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A 40 nm 2 kb MTJ-Based Non-Volatile SRAM Macro with Novel Data-Aware Store Architecture for Normally Off Computing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185432&Exemplar=1&LAN=DE A1 Suzuki, Kenta A1 Hiraga, Keizo A1 Bessho, Kazuhiro A1 Usami, Kimiyoshi A1 Umebayashi, Taku YR 2023 SN 2158-9682 K1 Latches K1 Nonvolatile memory K1 Random access memory K1 Process control K1 Energy measurement K1 Very large scale integration K1 Junctions K1 Non-volatile SRAM K1 Non-volatile flip-flop K1 STT-MRAM K1 Normally off computing K1 Power gating K1 MTJ SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185432 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185432 SF ELIB - SuUB Bremen
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