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1 Ergebnisse
1
W-band fully passivated AlN/GaN HEMT device with 56% power-..:
, In:
2023 Device Research Conference (DRC)
,
Arkun, F. Erdem
;
Denninghoff, Dan
;
Tran, Haidang
... - p. 1-2 , 2023
Link:
https://doi.org/10.1109/DRC58590.2023.10187016
RT T1
2023 Device Research Conference (DRC)
: T1
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
UL https://suche.suub.uni-bremen.de/peid=ieee-10187016&Exemplar=1&LAN=DE A1 Arkun, F. Erdem A1 Denninghoff, Dan A1 Tran, Haidang A1 Tran, Ryan A1 Miller, Nicholas C. A1 Elliott, Michael A1 Gilbert, Ryan A1 Milosavljevic, Ivan A1 Siddiqi, Georges A1 Fireman, Micha A1 Corrion, Andrea L. A1 Fanning, David A1 Peterson, Christi A1 Getter, Ariel A1 Clapper, Andrew YR 2023 SN 2640-6853 K1 Radio frequency K1 Cutoff frequency K1 HEMTs K1 Frequency measurement K1 Transistors K1 MODFETs K1 Power generation SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/DRC58590.2023.10187016 DO https://doi.org/10.1109/DRC58590.2023.10187016 SF ELIB - SuUB Bremen
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