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1 Ergebnisse
1
Low-Voltage Operation AlInN/GaN HEMTs on Si with High Outpu..:
, In:
2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
,
Takeuchi, Katsuhiko
;
Saruta, Kunihiko
;
Morita, Shinya
... - p. 28-31 , 2023
Link:
https://doi.org/10.1109/IMS37964.2023.10188112
RT T1 <cTitle>2023 IEEE/MTT-S International Microwave Symposium - IMS 2023</cTitle>: T1 <Title>Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10188112&Exemplar=1&LAN=DE A1 Takeuchi, Katsuhiko A1 Saruta, Kunihiko A1 Morita, Shinya A1 Matsumoto, Katsuji A1 Yanagita, Masashi A1 Taniguchi, Satoshi A1 Wada, Shinichi A1 Tasai, Kunihiko A1 Shimada, Masayuki A1 Yanashima, Katsunori YR 2023 SN 2576-7216 K1 Performance evaluation K1 Radio frequency K1 Low voltage K1 Power system measurements K1 Power measurement K1 Density measurement K1 HEMTs K1 5G K1 power amplifiers K1 Gallium Nitride SP 28 OP 31 LK http://dx.doi.org/https://doi.org/10.1109/IMS37964.2023.10188112 DO https://doi.org/10.1109/IMS37964.2023.10188112 SF ELIB - SuUB Bremen
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