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1 Ergebnisse
1
Contamination-Free Cu/SiCN Hybrid Bonding Process Developme..:
, In:
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
,
Hahn, Seung Ho
;
Kim, Wooyoung
;
Shin, Donggap
... - p. 1390-1396 , 2023
Link:
https://doi.org/10.1109/ECTC51909.2023.00238
RT T1
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
: T1
Contamination-Free Cu/SiCN Hybrid Bonding Process Development for Sub- μm Pitch Devices with Enhanced Bonding Characteristics
UL https://suche.suub.uni-bremen.de/peid=ieee-10195561&Exemplar=1&LAN=DE A1 Hahn, Seung Ho A1 Kim, Wooyoung A1 Shin, Donggap A1 Lee, Yongin A1 Kim, Sumin A1 Choi, Wonyoung A1 Lim, Kyeongbin A1 Moon, Bumki A1 Rhee, Minwoo YR 2023 SN 2377-5726 K1 Semiconductor device modeling K1 Surface contamination K1 Bonding processes K1 Stacking K1 Hybrid power systems K1 Plasmas K1 Bonding K1 Cu/SiCN hybrid bonding K1 wafer-to-wafer bonding K1 plasma surface activation K1 Cu contamination control K1 molecular dynamics simulation SP 1390 OP 1396 LK http://dx.doi.org/https://doi.org/10.1109/ECTC51909.2023.00238 DO https://doi.org/10.1109/ECTC51909.2023.00238 SF ELIB - SuUB Bremen
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