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1 Ergebnisse
1
Gallium Nitride (GaN) Device - Study and Application in Pow..:
, In:
2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES)
,
A.A, Adarsh
;
Puradannavar, Aashish
;
R.Shetty, Vijeta
.. - p. 1-6 , 2023
Link:
https://doi.org/10.1109/ICSSES58299.2023.10199342
RT T1 <cTitle>2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES)</cTitle>: T1 <Title>Gallium Nitride (GaN) Device - Study and Application in Power Electronics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10199342&Exemplar=1&LAN=DE A1 A.A, Adarsh A1 Puradannavar, Aashish A1 R.Shetty, Vijeta A1 N.Nadaf, Muskan A1 Raju, A.B. YR 2023 K1 Photonic band gap K1 Silicon carbide K1 Switching frequency K1 Switches K1 Voltage K1 Power electronics K1 Steady-state K1 Gallium Nitride(GaN) FET K1 body diode K1 output K1 transfer K1 switching characteristics K1 boost converter SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/ICSSES58299.2023.10199342 DO https://doi.org/10.1109/ICSSES58299.2023.10199342 SF ELIB - SuUB Bremen
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