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1
On the Electro-Thermal 2D FEM Parametric Analysis of SiC Ve..:
, In:
2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)
,
Cazimajou, Thibauld
;
Sarraute, Emmanuel
;
Richardeau, Frederic
- p. 212-217 , 2023
Link:
https://doi.org/10.23919/MIXDES58562.2023.10203258
RT T1 <cTitle>2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)</cTitle>: T1 <Title>On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency: Application for Fast Transient Extreme Short-Circuit Operation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10203258&Exemplar=1&LAN=DE A1 Cazimajou, Thibauld A1 Sarraute, Emmanuel A1 Richardeau, Frederic YR 2023 K1 Semiconductor device modeling K1 MOSFET K1 Electron traps K1 Analytical models K1 Mobility models K1 Software K1 Finite element analysis K1 Finite Element Simulation K1 Power Electronics K1 SiC Mosfet K1 Oxide trapped-charges K1 Short-Circuit Operation SP 212 OP 217 LK http://dx.doi.org/https://doi.org/10.23919/MIXDES58562.2023.10203258 DO https://doi.org/10.23919/MIXDES58562.2023.10203258 SF ELIB - SuUB Bremen
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