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1 Ergebnisse
1
IMS-based integrated SiC-MOSFET bidirectional switches for ..:
, In:
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
,
Lee, Y.
;
Aviles, S.
;
Duchesne, C.
.. - p. 45-52 , 2023
Link:
https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.1..
RT T1 <cTitle>2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)</cTitle>: T1 <Title>IMS-based integrated SiC-MOSFET bidirectional switches for advanced CSI implementation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10213803&Exemplar=1&LAN=DE A1 Lee, Y. A1 Aviles, S. A1 Duchesne, C. A1 Lasserre, P. A1 Castellazzi, A. YR 2023 SN 2150-6086 K1 Inductance K1 Silicon carbide K1 Prototypes K1 Metals K1 Switches K1 Bidirectional control K1 Inverters K1 Power devices K1 Packaging and integration K1 Bi-directional SiC MOSFET K1 Insulated metal substrate (IMS) SP 45 OP 52 LK http://dx.doi.org/https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213803 DO https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213803 SF ELIB - SuUB Bremen
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