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1 Ergebnisse
1
SiC MOSFET Crosstalk Modelling with Suppression Considering..:
, In:
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
,
Xie, Wenhao
;
Ji, Shiqi
;
Zhao, Zhengming
. - p. 881-887 , 2023
Link:
https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.1..
RT T1 <cTitle>2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)</cTitle>: T1 <Title>SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10213812&Exemplar=1&LAN=DE A1 Xie, Wenhao A1 Ji, Shiqi A1 Zhao, Zhengming A1 Mo, Xin YR 2023 SN 2150-6086 K1 Semiconductor device modeling K1 MOSFET K1 Analytical models K1 Solid modeling K1 Silicon carbide K1 Asia K1 Crosstalk K1 Crosstalk modelling K1 Crosstalk suppression K1 didt K1 dvdt K1 SiC MOSFETs SP 881 OP 887 LK http://dx.doi.org/https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213812 DO https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213812 SF ELIB - SuUB Bremen
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