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1 Ergebnisse
1
An Active Gate Driver for SiC to Meet Requirements in EMI a..:
, In:
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
,
Sun, Xizhi
;
Zhi, Shuangqing
;
Hao, Yuanchao
.. - p. 2004-2009 , 2023
Link:
https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.1..
RT T1 <cTitle>2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)</cTitle>: T1 <Title>An Active Gate Driver for SiC to Meet Requirements in EMI and Switching Loss by Slew Rate Control</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10213827&Exemplar=1&LAN=DE A1 Sun, Xizhi A1 Zhi, Shuangqing A1 Hao, Yuanchao A1 Ma, Mingcheng A1 Xu, Dianguo YR 2023 SN 2150-6086 K1 MOSFET K1 Silicon carbide K1 Electromagnetic interference K1 Switching loss K1 Switches K1 Control systems K1 Gate drivers K1 Active gate driver (AGD) K1 electromagnetic interference (EMI) K1 silicon carbide (SiC) K1 switching loss SP 2004 OP 2009 LK http://dx.doi.org/https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213827 DO https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213827 SF ELIB - SuUB Bremen
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