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1 Ergebnisse
1
Junction Temperature and Current Synchronous Sensing for Si..:
, In:
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
,
Jin, Yuting
;
Ye, Shuoyu
;
Wu, Qiang
... - p. 896-901 , 2023
Link:
https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.1..
RT T1
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
: T1
Junction Temperature and Current Synchronous Sensing for SiC MOSFETs Based on Electroluminescence Hyperspectral
UL https://suche.suub.uni-bremen.de/peid=ieee-10213923&Exemplar=1&LAN=DE A1 Jin, Yuting A1 Ye, Shuoyu A1 Wu, Qiang A1 Luo, Haoze A1 Li, Wuhua A1 He, Xiangning YR 2023 SN 2150-6086 K1 Temperature sensors K1 Temperature measurement K1 MOSFET K1 Smoothing methods K1 Silicon carbide K1 Electroluminescence K1 Junctions K1 Electroluminescence effect K1 hyperspectral analysis K1 SiC MOSFET K1 state monitoring SP 896 OP 901 LK http://dx.doi.org/https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213923 DO https://doi.org/10.23919/ICPE2023-ECCEAsia54778.2023.10213923 SF ELIB - SuUB Bremen
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