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1 Ergebnisse
1
A Double-Sided 650 V GaN Power Device Using Flexible Buffer..:
, In:
2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
,
Liu, Siqi
;
Li, Longnv
;
Mei, Yun-Hui
- p. 169-173 , 2023
Link:
https://doi.org/10.1109/PEDG56097.2023.10215139
RT T1
2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
: T1
A Double-Sided 650 V GaN Power Device Using Flexible Buffers with Low Parasitic Inductance
UL https://suche.suub.uni-bremen.de/peid=ieee-10215139&Exemplar=1&LAN=DE A1 Liu, Siqi A1 Li, Longnv A1 Mei, Yun-Hui YR 2023 SN 2329-5767 K1 Heating systems K1 Performance evaluation K1 Inductance K1 Silver K1 Semiconductor device measurement K1 Power measurement K1 Cooling K1 Gallium nitride (GaN) K1 double-sided cooling K1 packaging K1 wire bondless SP 169 OP 173 LK http://dx.doi.org/https://doi.org/10.1109/PEDG56097.2023.10215139 DO https://doi.org/10.1109/PEDG56097.2023.10215139 SF ELIB - SuUB Bremen
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