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1 Ergebnisse
1
Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMO..:
, In:
2023 13th International Conference on Power, Energy and Electrical Engineering (CPEEE)
,
Lai, Jhong-Yi
;
Chen, Wei-Jung
;
Chen, Shen-Li
- p. 17-21 , 2023
Link:
https://doi.org/10.1109/CPEEE56777.2023.10217487
RT T1 <cTitle>2023 13th International Conference on Power, Energy and Electrical Engineering (CPEEE)</cTitle>: T1 <Title>Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10217487&Exemplar=1&LAN=DE A1 Lai, Jhong-Yi A1 Chen, Wei-Jung A1 Chen, Shen-Li YR 2023 K1 Electrostatic discharge protection K1 Semiconductor device modeling K1 Schottky diodes K1 Breakdown voltage K1 MOSFET K1 Voltage measurement K1 Electric breakdown K1 Electrostatic Discharge (ESD) K1 Holding Voltage (Vh) K1 Human-body Model (HBM) K1 Lateral-diffused MOSFET (LDMOS) K1 Secondary breakdown current (It2) K1 Trigger Voltage (Vt1) K1 Transmission-line Pulse (TLP) SP 17 OP 21 LK http://dx.doi.org/https://doi.org/10.1109/CPEEE56777.2023.10217487 DO https://doi.org/10.1109/CPEEE56777.2023.10217487 SF ELIB - SuUB Bremen
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