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1 Ergebnisse
1
Effects of Chemical Displacing Time for the Characteristics..:
, In:
2023 Sixth International Symposium on Computer, Consumer and Control (IS3C)
,
Lin, Chu-En
;
Yu, Bo-Qin
;
You, Hsin-Chiang
... - p. 230-233 , 2023
Link:
https://doi.org/10.1109/IS3C57901.2023.00068
RT T1 <cTitle>2023 Sixth International Symposium on Computer, Consumer and Control (IS3C)</cTitle>: T1 <Title>Effects of Chemical Displacing Time for the Characteristics of the Nonvolatile Oxide-based Resistive Memory Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10219495&Exemplar=1&LAN=DE A1 Lin, Chu-En A1 Yu, Bo-Qin A1 You, Hsin-Chiang A1 Cheng, Yi-Ching A1 Lin, Jung-Chih A1 Wu, Chi-Chang YR 2023 SN 2770-0496 K1 Electrodes K1 Performance evaluation K1 Nonvolatile memory K1 Surface morphology K1 Surface roughness K1 Rough surfaces K1 Reliability K1 resistive memory K1 ReRAM K1 electrochemical metallization K1 chemical displacing technique K1 copper electrode SP 230 OP 233 LK http://dx.doi.org/https://doi.org/10.1109/IS3C57901.2023.00068 DO https://doi.org/10.1109/IS3C57901.2023.00068 SF ELIB - SuUB Bremen
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