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Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound met..:

, In: 2022 10th International Symposium on Next-Generation Electronics (ISNE),
Jia, Mao ; Hou, Bin ; Jia, Fu-Chun... - p. 1-3 , 2023
Link: https://doi.org/10.1109/ISNE56211.2023.10221606