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1 Ergebnisse
1
Evaluation by Simulation of Quasi-vertical GaN Schottky Bar..:
, In:
2022 10th International Symposium on Next-Generation Electronics (ISNE)
,
Liu, Kai
;
Wang, Chong
;
Zheng, Xuefeng
... - p. 1-3 , 2023
Link:
https://doi.org/10.1109/ISNE56211.2023.10221673
RT T1 <cTitle>2022 10th International Symposium on Next-Generation Electronics (ISNE)</cTitle>: T1 <Title>Evaluation by Simulation of Quasi-vertical GaN Schottky Barrier Diode With Trench Floating Metal Rings</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10221673&Exemplar=1&LAN=DE A1 Liu, Kai A1 Wang, Chong A1 Zheng, Xuefeng A1 Li, Ang A1 Ma, Xiaohua A1 Hao, Yue YR 2023 SN 2378-8607 K1 Structural rings K1 Schottky diodes K1 Electric breakdown K1 Simulation K1 Schottky barriers K1 Metals K1 Electric fields K1 GaN K1 quasi-vertical Schottky barrier diode K1 trench floating metal ring K1 breakdown voltage SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/ISNE56211.2023.10221673 DO https://doi.org/10.1109/ISNE56211.2023.10221673 SF ELIB - SuUB Bremen
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