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1 Ergebnisse
1
ESD-capability Study of High-voltage nLDMOSs with out the D..:
, In:
2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
,
Yang, Xiu-Yuan
;
Mai, Xing-Chen
;
Chen, Shen-Li
... - p. 223-224 , 2023
Link:
https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226737
RT T1 <cTitle>2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)</cTitle>: T1 <Title>ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10226737&Exemplar=1&LAN=DE A1 Yang, Xiu-Yuan A1 Mai, Xing-Chen A1 Chen, Shen-Li A1 Chung, Yu-Jie A1 Lai, Jhong-Yi A1 Lin, Ting-En YR 2023 SN 2575-8284 K1 Breakdown voltage K1 Electric breakdown K1 Modulation K1 High-voltage techniques K1 MOSFET circuits K1 Electrostatic discharges K1 Discharges (electric) K1 Electrostatic Discharge (ESD) K1 Holding Voltage(Vh) K1 Lateral-diffused MOSFET(LDMOS) K1 Secondary breakdown current(It2) K1 Trigger voltage (Vt1) SP 223 OP 224 LK http://dx.doi.org/https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226737 DO https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226737 SF ELIB - SuUB Bremen
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