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1 Ergebnisse
1
High-voltage nLDMOS Drain Side Schottky/SCR Modulations for..:
, In:
2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)
,
Lin, Ting-En
;
Chen, Shen-Li
;
Liu, Zhi-Wei
... - p. 225-226 , 2023
Link:
https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226885
RT T1 <cTitle>2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)</cTitle>: T1 <Title>High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10226885&Exemplar=1&LAN=DE A1 Lin, Ting-En A1 Chen, Shen-Li A1 Liu, Zhi-Wei A1 Mai, Xing-Chen A1 Yang, Xiu-Yuan A1 Chung, Yu-Jie YR 2023 SN 2575-8284 K1 Resistance K1 Schottky diodes K1 Electric breakdown K1 Schottky barriers K1 Modulation K1 High-voltage techniques K1 Resists K1 Electrostatic discharge K1 Laterally-diffused metal-oxide semiconductor K1 Schottky Diode K1 Secondary breakdown current K1 Silicon controlled rectifier SP 225 OP 226 LK http://dx.doi.org/https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226885 DO https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226885 SF ELIB - SuUB Bremen
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