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1 Ergebnisse
1
High-temperature Electrical Characteristics of JBS-integrat..:
, In:
2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA)
,
Gu, Zhaoyuan
;
Yang, Mingchao
;
Yang, Yi
... - p. 1145-1150 , 2023
Link:
https://doi.org/10.1109/ICIEA58696.2023.10241572
RT T1 <cTitle>2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA)</cTitle>: T1 <Title>High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10241572&Exemplar=1&LAN=DE A1 Gu, Zhaoyuan A1 Yang, Mingchao A1 Yang, Yi A1 Liu, Weihua A1 Han, Chuanyu A1 Geng, Li A1 Hao, Yue YR 2023 SN 2158-2297 K1 Temperature measurement K1 Performance evaluation K1 Temperature distribution K1 Schottky diodes K1 MOSFET K1 Power measurement K1 Silicon carbide K1 JBS-integrated MOSFET K1 high-temperature K1 third quadrant characteristics K1 reverse recovery characteristics SP 1145 OP 1150 LK http://dx.doi.org/https://doi.org/10.1109/ICIEA58696.2023.10241572 DO https://doi.org/10.1109/ICIEA58696.2023.10241572 SF ELIB - SuUB Bremen
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