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1 Ergebnisse
1
RESURF Region Variation Induced Current Crowding Effect on ..:
, In:
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
,
Lee, Jian-Hsing
;
Li, Ching-Ho
;
Nidhi, Karuna
... - p. 1-7 , 2023
Link:
https://doi.org/10.1109/IPFA58228.2023.10249061
RT T1 <cTitle>2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)</cTitle>: T1 <Title>RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10249061&Exemplar=1&LAN=DE A1 Lee, Jian-Hsing A1 Li, Ching-Ho A1 Nidhi, Karuna A1 Lin, Chih-Hsuan A1 Chuang, Chieh-Yao A1 Lin, Wei-Hsin A1 Hsu, Kei-Chieh A1 Jou, Yeh-Ning A1 Huang, Shao-Chang A1 Liao, Chih-Cherng A1 Chen, Ke-Horng YR 2023 SN 1946-1550 K1 Shape K1 Proximity effects K1 Implants K1 Voltage K1 Electrostatic discharges K1 Doping profiles K1 Turning K1 Electrostatic-Discharge (ESD) K1 Transmission-Line Pulse (TLP) K1 Reduced Surface Field (RESURF) SP 1 OP 7 LK http://dx.doi.org/https://doi.org/10.1109/IPFA58228.2023.10249061 DO https://doi.org/10.1109/IPFA58228.2023.10249061 SF ELIB - SuUB Bremen
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