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1 Ergebnisse
1
Transient Analysis of AlGaN/GaN Heterostructure Based on Sp..:
, In:
2023 International Applied Computational Electromagnetics Society Symposium (ACES-China)
,
Yan, Xiaohu
;
Li, Chunyu
;
Xu, Zuyin
... - p. 1-3 , 2023
Link:
https://doi.org/10.23919/ACES-China60289.2023.10249679
RT T1 <cTitle>2023 International Applied Computational Electromagnetics Society Symposium (ACES-China)</cTitle>: T1 <Title>Transient Analysis of AlGaN/GaN Heterostructure Based on Spectral-Element Time-Domain Method</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10249679&Exemplar=1&LAN=DE A1 Yan, Xiaohu A1 Li, Chunyu A1 Xu, Zuyin A1 Zhang, Tiancheng A1 Bao, Huaguang A1 Ding, Dazhi YR 2023 K1 Semiconductor device modeling K1 Computational modeling K1 HEMTs K1 Heterojunctions K1 Boundary conditions K1 Mathematical models K1 Wide band gap semiconductors K1 AlGaN/GaN HEMT K1 numerical simulation K1 drift diffusion model K1 spectral-element time-domain (SETD) method SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.23919/ACES-China60289.2023.10249679 DO https://doi.org/10.23919/ACES-China60289.2023.10249679 SF ELIB - SuUB Bremen
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