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1 Ergebnisse
1
Synergistic Effects Simulation of MOSFET by Control Volume ..:
, In:
2023 International Applied Computational Electromagnetics Society Symposium (ACES-China)
,
Li, Tan-Yi
;
Zhan, Q.
;
Yin, W. Y.
- p. 1-3 , 2023
Link:
https://doi.org/10.23919/ACES-China60289.2023.10250124
RT T1 <cTitle>2023 International Applied Computational Electromagnetics Society Symposium (ACES-China)</cTitle>: T1 <Title>Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10250124&Exemplar=1&LAN=DE A1 Li, Tan-Yi A1 Zhan, Q. A1 Yin, W. Y. YR 2023 K1 Semiconductor device modeling K1 Radiation effects K1 MOSFET K1 Solid modeling K1 Semiconductor device measurement K1 Finite element analysis K1 Numerical models K1 Analog transient radiation effects in electronics (ATREE) K1 electromagnetic pluse (EMP) K1 metal oxide semiconduc-tor field-effect transistor (MOSFET) K1 synergistic effects SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.23919/ACES-China60289.2023.10250124 DO https://doi.org/10.23919/ACES-China60289.2023.10250124 SF ELIB - SuUB Bremen
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