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1 Ergebnisse
1
Investigation of Positive Bias Temperature Instability of 4..:
, In:
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Wen, Yu-Xin
;
Wang, Chia-Hua
;
Hsiao, Yi-Kai
.. - p. 1-5 , 2023
Link:
https://doi.org/10.1109/WiPDAAsia58218.2023.10261894
RT T1 <cTitle>2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)</cTitle>: T1 <Title>Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10261894&Exemplar=1&LAN=DE A1 Wen, Yu-Xin A1 Wang, Chia-Hua A1 Hsiao, Yi-Kai A1 Hung, Chia-Lung A1 Tsui, Bing-Yue YR 2023 SN 2831-3712 K1 Temperature measurement K1 Temperature dependence K1 Silicon carbide K1 Asia K1 MOS capacitors K1 Logic gates K1 Tunneling K1 positive bias temperature instability K1 near-interface oxide traps K1 deep interface states K1 Poole-Frenkel emission K1 trap-assisted tunneling SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia58218.2023.10261894 DO https://doi.org/10.1109/WiPDAAsia58218.2023.10261894 SF ELIB - SuUB Bremen
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