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1 Ergebnisse
1
An Ultralow Forward Voltage SiC Trenched Junction-Pinched B..:
, In:
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Hsu, Fu-Jen
;
Yen, Cheng-Tyng
;
Hung, Hsiang-Ting
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/WiPDAAsia58218.2023.10261902
RT T1 <cTitle>2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)</cTitle>: T1 <Title>An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10261902&Exemplar=1&LAN=DE A1 Hsu, Fu-Jen A1 Yen, Cheng-Tyng A1 Hung, Hsiang-Ting A1 Chang, Ting-Fu A1 Hu, Jia-Wei A1 Huang, Chih-Fang YR 2023 SN 2831-3712 K1 Performance evaluation K1 Schottky diodes K1 Electric potential K1 Sensitivity K1 Silicon carbide K1 Rectifiers K1 High-voltage techniques K1 Pinched Barrier Rectifier (PBR) K1 Junction Barrier Schottky (JBS) K1 SiC K1 Diode K1 Trenched junction-pinched barrier rectifier (TBR) SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia58218.2023.10261902 DO https://doi.org/10.1109/WiPDAAsia58218.2023.10261902 SF ELIB - SuUB Bremen
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