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1 Ergebnisse
1
Substrate Bias Effect of 28 nm-node HK/MG nMOSFETs with DPN..:
, In:
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Chao, Shou-Yen
;
Wang, Ming-Han
;
Zheng, Mei-Yuan
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/WiPDAAsia58218.2023.10261907
RT T1
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
Substrate Bias Effect of 28 nm-node HK/MG nMOSFETs with DPN Temperature Treatments
UL https://suche.suub.uni-bremen.de/peid=ieee-10261907&Exemplar=1&LAN=DE A1 Chao, Shou-Yen A1 Wang, Ming-Han A1 Zheng, Mei-Yuan A1 Kuo, Jin-An A1 Lan, Wen-How A1 He, Yuan-Jheng A1 Wang, Mu-Chun YR 2023 SN 2831-3712 K1 Temperature sensors K1 Performance evaluation K1 MOSFET K1 Annealing K1 Photonic band gap K1 Asia K1 Throughput K1 substrate bias K1 threshold voltage K1 nMOSFET K1 DPN treatment K1 channel implant SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia58218.2023.10261907 DO https://doi.org/10.1109/WiPDAAsia58218.2023.10261907 SF ELIB - SuUB Bremen
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