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1 Ergebnisse
1
The development of the process for low-temperature surface ..:
, In:
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Tsai, Pei-Chun
;
Huang, Jhong-Ren
;
Hong, Lu-Sheng
- p. 1-4 , 2023
Link:
https://doi.org/10.1109/WiPDAAsia58218.2023.10261912
RT T1
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
The development of the process for low-temperature surface carbonization of Si(111) substrate and the subsequent growth of 3C-SiC epitaxial buffer layer
UL https://suche.suub.uni-bremen.de/peid=ieee-10261912&Exemplar=1&LAN=DE A1 Tsai, Pei-Chun A1 Huang, Jhong-Ren A1 Hong, Lu-Sheng YR 2023 SN 2831-3712 K1 Buffer layers K1 Silicon carbide K1 Photonic band gap K1 Atomic layer deposition K1 Conferences K1 Asia K1 Epitaxial growth K1 Si(111) K1 surface carbonization K1 SiC buffer layer K1 UHV-CVD K1 acetylene K1 methyltrichlorosilane SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia58218.2023.10261912 DO https://doi.org/10.1109/WiPDAAsia58218.2023.10261912 SF ELIB - SuUB Bremen
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