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1 Ergebnisse
1
Charge Pump Based Gate Driver Integrated Circuit for SiC MO..:
, In:
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Jiang, Mao-Hong
;
Wu, Chan-Liang
;
Huang, Chung-Hsun
- p. 1-4 , 2023
Link:
https://doi.org/10.1109/WiPDAAsia58218.2023.10261932
RT T1
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFET
UL https://suche.suub.uni-bremen.de/peid=ieee-10261932&Exemplar=1&LAN=DE A1 Jiang, Mao-Hong A1 Wu, Chan-Liang A1 Huang, Chung-Hsun YR 2023 SN 2831-3712 K1 Integrated circuits K1 MOSFET K1 Charge pumps K1 Power system measurements K1 Silicon carbide K1 Density measurement K1 Asia K1 Gate Drive K1 Charge Pump K1 SiC MOSFET K1 Integrated Circuit SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia58218.2023.10261932 DO https://doi.org/10.1109/WiPDAAsia58218.2023.10261932 SF ELIB - SuUB Bremen
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