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1 Ergebnisse
1
The Development of 1.7kV 100A SiC MOSFET Power Module for A..:
, In:
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Chiu, Po-Kai
;
Lin, Hsin-Han
;
Huan, Yuan-Cheng
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/WiPDAAsia58218.2023.10261934
RT T1
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
The Development of 1.7kV 100A SiC MOSFET Power Module for Automotive Application
UL https://suche.suub.uni-bremen.de/peid=ieee-10261934&Exemplar=1&LAN=DE A1 Chiu, Po-Kai A1 Lin, Hsin-Han A1 Huan, Yuan-Cheng A1 Syu, Ji-Yuan A1 Liu, Yan-Cheng A1 Fan, Yan-Bo A1 Cheng, Yu-Hua A1 Chang, Chien-Wei A1 Hsieh, Yung-Min A1 Kao, Kuo-Shu A1 Tsai, Chu-Han YR 2023 SN 2831-3712 K1 Vibrations K1 MOSFET K1 Inductance K1 Silicon carbide K1 Thermal resistance K1 Automotive applications K1 Asia K1 SiC K1 power module K1 simulation analysis K1 packaging K1 reliability SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia58218.2023.10261934 DO https://doi.org/10.1109/WiPDAAsia58218.2023.10261934 SF ELIB - SuUB Bremen
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