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1 Ergebnisse
1
Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for..:
, In:
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
,
Makhoul, Ralph
;
Beydoun, Nour
;
Bourennane, Abdelhakim
... - p. 1-9 , 2023
Link:
https://doi.org/10.23919/EPE23ECCEEurope58414.2023.102..
RT T1 <cTitle>2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)</cTitle>: T1 <Title>Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10264325&Exemplar=1&LAN=DE A1 Makhoul, Ralph A1 Beydoun, Nour A1 Bourennane, Abdelhakim A1 Phung, Luong Viet A1 Lazar, Mihai A1 Richardeau, Frederic A1 Godignon, Philippe A1 Planson, Dominique A1 Morel, Herve A1 Bourrier, David YR 2023 K1 Semiconductor device modeling K1 MOSFET K1 Silicon carbide K1 Europe K1 Switches K1 Etching K1 Surface roughness K1 Switching cell K1 SiC MOSFET K1 Device integration K1 Device modelling K1 Device simulation SP 1 OP 9 LK http://dx.doi.org/https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264325 DO https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264325 SF ELIB - SuUB Bremen
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