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1
Driving Cycle Power Loss Analysis of SiC-MOSFET and Si-IGBT..:
, In:
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
,
Schluter, Michael
;
Gentejohann, Marius
;
Dieckerhoff, Sibylle
- p. 1-11 , 2023
Link:
https://doi.org/10.23919/EPE23ECCEEurope58414.2023.102..
RT T1
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
: T1
Driving Cycle Power Loss Analysis of SiC-MOSFET and Si-IGBT Traction Inverters for Electric Vehicles
UL https://suche.suub.uni-bremen.de/peid=ieee-10264506&Exemplar=1&LAN=DE A1 Schluter, Michael A1 Gentejohann, Marius A1 Dieckerhoff, Sibylle YR 2023 K1 Insulated gate bipolar transistors K1 MOSFET K1 Silicon carbide K1 Modulation K1 Europe K1 Logic gates K1 Electric vehicles K1 Electric Vehicle (EV) K1 power semiconductor device K1 switching and conduction losses K1 three-phase motor drive K1 analytical losses computation SP 1 OP 11 LK http://dx.doi.org/https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264506 DO https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264506 SF ELIB - SuUB Bremen
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