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1
Investigation of acceleration factors of the HV-H3TRB test ..:
, In:
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
,
Hatori, Kenji
;
Ebihara, Kohei
;
Ishimoto, Kazufumi
... - p. 1-9 , 2023
Link:
https://doi.org/10.23919/EPE23ECCEEurope58414.2023.102..
RT T1 <cTitle>2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)</cTitle>: T1 <Title>Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10264596&Exemplar=1&LAN=DE A1 Hatori, Kenji A1 Ebihara, Kohei A1 Ishimoto, Kazufumi A1 Tsuda, Ryo A1 Soltau, Nils A1 Idaka, Shiori A1 Wiesner, Eugen A1 Schonewolf, Stefan A1 Schuster, Oskar A1 Hanf, Michael YR 2023 K1 Silicon devices K1 Temperature K1 Silicon carbide K1 Europe K1 Humidity K1 Life estimation K1 Voltage K1 «Silicon Carbide (SiC)» K1 «Humidity» K1 «Lifetime» K1 «Schottky diode» K1 «Reliability» SP 1 OP 9 LK http://dx.doi.org/https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264596 DO https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264596 SF ELIB - SuUB Bremen
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