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High Resistivity Trap-Rich Substrate for RF MEMS Switches:

, In: 2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP),

Nabet, Massinissa ; Rack, Martin ; Huet, Benjamin... - p. 1-4 , 2023

Link: https://doi.org/10.1109/DTIP58682.2023.10267954

RT 
T1 <cTitle>2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP)</cTitle>: T1 <Title>High Resistivity Trap-Rich Substrate for RF MEMS Switches</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10267954&Exemplar=1&LAN=DE
				
A1 Nabet, Massinissa
A1 Rack, Martin
A1 Huet, Benjamin
A1 Tuyaerts, Romain
A1 Scheen, Gilles
A1 Zhang, Ling Yan
A1 Emiel, Arthur
A1 Dorion, Clement
A1 Blondy, Pierre
A1 Stefanini, Romain
A1 Raskin, Jean-Pierre
YR 2023
SN 2768-1874
K1 Radio frequency
K1 Micromechanical devices
K1 Microswitches
K1 Linearity
K1 Insertion loss
K1 Conductivity
K1 Packaging
K1 Effective resistivity (ρeff)
K1 harmonic distortion (HD)
K1 oxide charges (Qox)
K1 parasitic surface conduction (PSC)
K1 trap-rich substrate (TR)
K1 single pole double throw (SPDT)
K1 radio-frequency (RF) microelectromechanical (MEMS) switches
SP 1
OP 4
LK http://dx.doi.org/https://doi.org/10.1109/DTIP58682.2023.10267954
DO https://doi.org/10.1109/DTIP58682.2023.10267954
SF ELIB - SuUB Bremen

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