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1 Ergebnisse
1
New Insights into Read Current Margin and Memory Window of ..:
, In:
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
,
Su, Chang
;
Liang, Zhongxin
;
Fu, Zhiyuan
... - p. 89-92 , 2023
Link:
https://doi.org/10.1109/ESSDERC59256.2023.10268479
RT T1
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
: T1
New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout
UL https://suche.suub.uni-bremen.de/peid=ieee-10268479&Exemplar=1&LAN=DE A1 Su, Chang A1 Liang, Zhongxin A1 Fu, Zhiyuan A1 Xu, Shaodi A1 Wang, Kaifeng A1 Cai, Puyang A1 Chen, Liang A1 Huang, Ru A1 Huang, Qianqian YR 2023 SN 2378-6558 K1 Electric potential K1 Analytical models K1 Europe K1 Switches K1 Voltage K1 Capacitance K1 Iron K1 FeFET K1 memory window K1 read current margin K1 read operation K1 polarization switching dynamics SP 89 OP 92 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC59256.2023.10268479 DO https://doi.org/10.1109/ESSDERC59256.2023.10268479 SF ELIB - SuUB Bremen
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