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1 Ergebnisse
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Integration of HfO2-based 3D OxRAM with GAA stacked-nanoshe..:
, In:
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
,
Dubreuil, T.
;
Barraud, S.
;
Pedini, J.-M.
... - p. 117-120 , 2023
Link:
https://doi.org/10.1109/ESSDERC59256.2023.10268513
RT T1 <cTitle>ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)</cTitle>: T1 <Title>Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10268513&Exemplar=1&LAN=DE A1 Dubreuil, T. A1 Barraud, S. A1 Pedini, J.-M. A1 Hartmann, J.-M. A1 Boulard, F. A1 Sarrazin, A. A1 Gharbi, A. A1 Sturm, J. A1 Lambert, A. A1 Martin, S. A1 Castellani, N. A1 Anotta, A. A1 Magalhaes-Lucas, A. A1 Souhaite, A. A1 Andrieu, F. YR 2023 SN 2378-6558 K1 Electrodes K1 Three-dimensional displays K1 Gallium arsenide K1 Field effect transistors K1 Europe K1 Switches K1 Voltage K1 3D K1 OxRAM K1 1T1R memory K1 Gate-All-Around K1 Nanosheet FET SP 117 OP 120 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC59256.2023.10268513 DO https://doi.org/10.1109/ESSDERC59256.2023.10268513 SF ELIB - SuUB Bremen
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