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RF performance of Standard, High-Resistivity and Trap-Rich ..:
, In:
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
,
Berlingard, Q.
;
Moulin, M.
;
Michel, J.-P.
... - p. 148-151 , 2023
Link:
https://doi.org/10.1109/ESSDERC59256.2023.10268536
RT T1 <cTitle>ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)</cTitle>: T1 <Title>RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10268536&Exemplar=1&LAN=DE A1 Berlingard, Q. A1 Moulin, M. A1 Michel, J.-P. A1 Fache, T. A1 Charlet, I. A1 Plantier, C. A1 Chalupa, Z. A1 Lugo-Alvarez, J. A1 Raskin, J.-P. A1 Hutin, L. A1 Casse, M. YR 2023 SN 2378-6558 K1 Radio frequency K1 Q-factor K1 Temperature K1 Limiting K1 Surface resistance K1 Cryogenics K1 Silicon K1 RF substrates K1 cryogenic measurement K1 Standard silicon substrate K1 High-Resistivity silicon substrate K1 Trap-Rich silicon substrate K1 CryoCMOS K1 inductors K1 High-Q inductor SP 148 OP 151 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC59256.2023.10268536 DO https://doi.org/10.1109/ESSDERC59256.2023.10268536 SF ELIB - SuUB Bremen
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