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1 Ergebnisse
1
Different approximations for carriers lifetimes in HgCdTe q..:
, In:
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
,
Vallone, M.
;
Alasio, M. G. C.
;
Tibaldi, A.
... - p. 25-26 , 2023
Link:
https://doi.org/10.1109/NUSOD59562.2023.10273472
RT T1 <cTitle>2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)</cTitle>: T1 <Title>Different approximations for carriers lifetimes in HgCdTe quasi-neutral regions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10273472&Exemplar=1&LAN=DE A1 Vallone, M. A1 Alasio, M. G. C. A1 Tibaldi, A. A1 Bertazzi, F. A1 Hanna, S. A1 Eich, D. A1 Wegmann, A. A1 Figgemeier, H. A1 Ghione, G. A1 Goano, M. YR 2023 SN 2158-3242 K1 Temperature dependence K1 II-VI semiconductor materials K1 Ionization K1 Dark current K1 Numerical simulation K1 Photodetectors K1 Charge carrier lifetime K1 minority carrier lifetime K1 focal plane arrays K1 HgCdTe K1 dark current K1 diffusion current K1 incomplete dopants ionization SP 25 OP 26 LK http://dx.doi.org/https://doi.org/10.1109/NUSOD59562.2023.10273472 DO https://doi.org/10.1109/NUSOD59562.2023.10273472 SF ELIB - SuUB Bremen
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