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1 Ergebnisse
1
Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF ..:
, In:
2023 18th European Microwave Integrated Circuits Conference (EuMIC)
,
Dwidar, Mahmud
;
Ofiare, Afesomeh
;
Wasige, Edward
. - p. 54-57 , 2023
Link:
https://doi.org/10.23919/EuMIC58042.2023.10288918
RT T1
2023 18th European Microwave Integrated Circuits Conference (EuMIC)
: T1
Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications
UL https://suche.suub.uni-bremen.de/peid=ieee-10288918&Exemplar=1&LAN=DE A1 Dwidar, Mahmud A1 Ofiare, Afesomeh A1 Wasige, Edward A1 Al-Khalidi, Abdullah YR 2023 K1 Radio frequency K1 Wireless communication K1 Sulfur hexafluoride K1 HEMTs K1 Microwave theory and techniques K1 Threshold voltage K1 Microwave transistors K1 Ultra low DIBL K1 AlN/GaN HEMTs K1 normally-off K1 enhancement mode K1 low damage K1 T-gate K1 W-band K1 fT/ fmax SP 54 OP 57 LK http://dx.doi.org/https://doi.org/10.23919/EuMIC58042.2023.10288918 DO https://doi.org/10.23919/EuMIC58042.2023.10288918 SF ELIB - SuUB Bremen
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