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1 Ergebnisse
1
Characteristics of IGBT Devices Considering Various Parasit..:
, In:
2023 IEEE 7th Information Technology and Mechatronics Engineering Conference (ITOEC)
,
Li, Hanjiang
;
Li, Yuan
;
Zhang, Xiao
. - p. 1555-1559 , 2023
Link:
https://doi.org/10.1109/ITOEC57671.2023.10291411
RT T1 <cTitle>2023 IEEE 7th Information Technology and Mechatronics Engineering Conference (ITOEC)</cTitle>: T1 <Title>Characteristics of IGBT Devices Considering Various Parasitic Parameters and Construction of Refined Model</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10291411&Exemplar=1&LAN=DE A1 Li, Hanjiang A1 Li, Yuan A1 Zhang, Xiao A1 Li, Dengfeng YR 2023 SN 2693-289X K1 Insulated gate bipolar transistors K1 MOSFET K1 Analytical models K1 Silicon carbide K1 Switches K1 Mathematical models K1 Power grids K1 IGBT characteristics K1 mathematical model K1 parasitic components K1 Miller effect SP 1555 OP 1559 LK http://dx.doi.org/https://doi.org/10.1109/ITOEC57671.2023.10291411 DO https://doi.org/10.1109/ITOEC57671.2023.10291411 SF ELIB - SuUB Bremen
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